Breakdown occurs with heavily
doped junction regions (ie. highly doped regions are better conductors). If a reverse voltage
is applied and the depletion region is too narrow for avalanche breakdown (minority
carriers cannot reach high enough energies over the distance traveled ) the electric field
will grow. However, electrons are pulled directly from the valence band on the P side to the
conduction band on the N side. This type of breakdown is not destructive if the reverse
current is limited.
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